Electrical properties of antiferroelectric Pb(Zr,Hf)O<sub>3</sub> films fabricated by chemical solution deposition
نویسندگان
چکیده
Abstract Pb(Zr 1− x Hf )O 3 ( = 0, 0.1, 0.2, 0.5, 1) films were fabricated on Pt/Ti/SiO 2 /Si substrates using a chemical solution deposition process in this study. The effect of the Zr/Hf ratio energy-storage performance was evaluated based measurement P – E hysteresis loops. It is shown that maximum polarization and recoverable energy density decrease with increase concentration. efficiency Hf-contained close to each other but higher than PbZrO film. As result, 0.9 0.1 film achieved work exhibited highest 11.3 J cm −3 larger 55% at 800 kV −1 , exceeding those either or PbHfO single-component This enhancement related size homogeneity crystal grains.
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ژورنال
عنوان ژورنال: Japanese Journal of Applied Physics
سال: 2022
ISSN: ['0021-4922', '1347-4065']
DOI: https://doi.org/10.35848/1347-4065/ac7ea7